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Munaf Rahimo patents

Recent bibliographic sampling of Munaf Rahimo patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):



04/23/15 - 20150109031 - Rc-igbt with freewheeling sic diode
A semiconductor module as disclosed can include a reverse conducting transistor, with a gate, a collector and an emitter providing a reverse conducting diode between collector and emitter; at least one freewheeling diode connected antiparallel to the transistor having a forward voltage drop higher than the reverse conducting diode during...
Inventors: Munaf Rahimo (Abb Technology Ag)

12/18/14 - 20140370665 - Power semiconductor device and method for manufacturing such a power semiconductor device
A method for manufacturing a power semiconductor device is disclosed which can include: providing a wafer of a first conductivity type; and applying on a second main side of the wafer at least one of a dopant of the first conductivity type for forming a layer of the first conductivity...
Inventors: Munaf Rahimo, Chiara Corvasce, Jan Vobecky, Yoichi Otani (Abb Technology Ag)

10/30/14 - 20140320178 - Intelligent gate driver for igbt
A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a...
Inventors: Falah Hosini, Madhan Mohan, Siva Nagi Reddy Pamulapati, Arnost Kopta, Munaf Rahimo, Raffael Schnell, Ulrich Schlapbach (Abb Technology Ag)

05/08/14 - 20140124831 - Insulated gate bipolar transistor
An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first source region arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and a...
Inventors: Munaf Rahimo, Maxi Andenna, Chiara Corvasce, Arnost Kopta (Abb Technology Ag)

05/08/14 - 20140124830 - Insulated gate bipolar transistor
An IGBT has layers between emitter and collector sides, including a drift layer, a base layer electrically contacting an emitter electrode and completely separated from the drift layer, first and second source regions arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and first...
Inventors: Munaf Rahimo, Maxi Andenna, Chiara Corvasce, Arnost Kopta (Abb Technology Ag)

05/08/14 - 20140124829 - Insulated gate bipolar transistor
An IGBT has layers between emitter and collector sides. The layers include a collector layer on the collector side, a drift layer, a base layer of a second conductivity type, a first source region arranged on the base layer towards the emitter side, a trench gate electrode arranged lateral to...
Inventors: Maxi Andenna, Munaf Rahimo, Chiara Corvasce, Arnost Kopta (Abb Technology Ag)

02/06/14 - 20140034997 - Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
A method for manufacturing a bipolar punch-through semiconductor device is disclosed, which includes providing a wafer having a first and a second side, wherein on the first side a high-doped layer of the first conductivity type having constant high doping concentration is arranged; epitaxially growing a low-doped layer of the...
Inventors: Munaf Rahimo, Arnost Kopta, Thomas Clausen, Maxi Andenna (Abb Technology Ag)

12/19/13 - 20130334566 - Power semiconductor device and method for manufacturing such a power semiconductor device
An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity...
Inventors: Munaf Rahimo, Marco Bellini, Maxi Andenna, Friedhelm Bauer, Iulian Nistor (Abb Technology Ag)

09/05/13 - 20130228823 - Reverse-conducting semiconductor device
A reverse-conducting semiconductor device (RC-IGBT) including a freewheeling diode and an insulated gate bipolar transistor (IGBT), and a method for making the RC-IGBT are provided. A first layer of a first conductivity type is created on a collector side before a second layer of a second conductivity type is created...
Inventors: Munaf Rahimo, Wolfgang Janisch, Eustachio Faggiano (Abb Technology Ag)

08/15/13 - 20130207159 - Bipolar non-punch-through power semiconductor device
An exemplary bipolar non-punch-through power semiconductor device includes a semiconductor wafer and a first electrical contact on a first main side and a second electrical contact on a second main side. The wafer has an inner region with a wafer thickness and a termination region that surrounds the inner region,...
Inventors: Jan Vobecky, Munaf Rahimo (Abb Technology Ag)

08/15/13 - 20130207157 - Reverse-conducting power semiconductor device
An exemplary reverse-conducting power semiconductor device with a wafer having a first main side and a second main side parallel to the first main side. The device includes a plurality of diode cells and a plurality of IGCT cells, each IGCT cell including between the first and second main side:...
Inventors: Munaf Rahimo, Martin Arnold, Thomas Stiasny (Abb Technology Ag)

04/25/13 - 20130099279 - Power semiconductor device
An exemplary power semiconductor device with a wafer having an emitter electrode on an emitter side and a collector electrode on a collector side, an (n-) doped drift layer, an n-doped first region, a p-doped base layer, an n-doped source region, and a gate electrode, all of which being formed...
Inventors: Liutauras Storasta, Arnost Kopta, Munaf Rahimo (Abb Technology Ag)

01/31/13 - 20130026537 - Power semiconductor device
A power semiconductor device is disclosed with layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side. The device can include a drift layer, a first base layer in direct electrical contact to the emitter electrode, a first source...
Inventors: Munaf Rahimo, Arnost Kopta, Christoph Von Arx, Maxi Andenna (Abb Technology Ag)

11/29/12 - 20120299054 - Power semiconductor device
A power semiconductor device includes a four-layer structure having layers arranged in order: (i) a cathode layer of a first conductivity type with a central area being surrounded by a lateral edge, the cathode layer being in direct electrical contact with a cathode electrode, (ii) a base layer of a...
Inventors: Munaf Rahimo (Abb Technology Ag)

11/08/12 - 20120280272 - Punch-through semiconductor device and method for producing same
wherein a punch-through voltage Vpt of the semiconductor device is between 70% and 99% of a break down voltage Vbd of the semiconductor device, and wherein the thickness W is a minimum thickness of the base layer between a junction to the channel region and the buffer layer....
Inventors: Munaf Rahimo, Arnost Kopta, Jan Vobecky, Wolfgang Janisch (Abb Technology Ag)

08/09/12 - 20120199954 - Semiconductor device
A semiconductor device which provides a small and simple design with efficient cooling. A first electrically conducting cooling element is in contact with first electrodes of semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the first electrodes of the semiconductor elements to an...
Inventors: Slavo Kicin, Nicola Schulz, Munaf Rahimo, Raffael Schnell (Abb Research Ltd)

11/17/11 - 20110278694 - Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
A bipolar punch-through semiconductor device has a semiconductor substrate, which includes at least a two-layer structure, a first main side with a first electrical contact, and a second main side with a second electrical contact. One of the layers in the two-layer structure is a base layer of the first...
Inventors: Munaf Rahimo, Ulrich Schlapbach, Arnost Kopta (Abb Technology Ag)

08/25/11 - 20110204414 - Reverse-conducting semiconductor device
A reverse-conducting semiconductor device includes a freewheeling diode and an insulated gate bipolar transistor (IGBT) on a common wafer. Part of the wafer forms a base layer with a base layer thickness. The IGBT includes a collector side and an emitter side arranged on opposite sides of the wafer. A...
Inventors: Arnost Kopta, Munaf Rahimo (Abb Technology Ag)

06/09/11 - 20110136300 - Method for producing a semiconductor device using laser annealing for selectively activating implanted dopants
A method for producing a semiconductor device such as a RC-IGBT or a BIGT having a patterned surface wherein partial regions doped with dopants of a first conductivity type and regions doped with dopants of a second conductivity type are on a same side of a semiconductor substrate is proposed....
Inventors: Jan Vobecky, Munaf Rahimo (Abb Technology Ag)

05/12/11 - 20110108953 - Fast recovery diode
A fast recovery diode includes an n-doped base layer having a cathode side and an anode side opposite the cathode side. A p-doped anode layer is arranged on the anode side. The anode layer has a doping profile and includes at least two sublayers. A first one of the sublayers...
Inventors: Jan Vobecky, Kati Hemmann, Hamit Duran, Munaf Rahimo (Abb Technology Ag)

11/25/10 - 20100295093 - Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device
A method for manufacturing a reverse-conducting semiconductor device (RC-IGBT) with a seventh layer formed as a gate electrode and a first electrical contact on a emitter side and a second electrical contact on a collector side, which is opposite the emitter side, a wafer of a first conductivity type with...
Inventors: Munaf Rahimo, Babak H-alikhani (Abb Technology Ag)

11/04/10 - 20100276727 - Reverse-conducting semiconductor device
A reverse-conducting semiconductor device is disclosed with an electrically active region, which includes a freewheeling diode and an insulated gate bipolar transistor on a common wafer. Part of the wafer forms a base layer with a base layer thickness. A first layer of a first conductivity type with at least...
Inventors: Liutauras Storasta, Munaf Rahimo, Christoph Von Arx, Arnost Kopta, Raffael Schnell (Abb Technology Ag)

10/28/10 - 20100270587 - Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device
A reverse-conducting semiconductor device (RC-IGBT) including a freewheeling diode and an insulated gate bipolar transistor (IGBT), and a method for making the RC-IGBT are provided. A wafer has first and second sides emitter and collector sides of the IGBT, respectively. At least one layer of a first or second conductivity...
Inventors: Munaf Rahimo, Wolfgang Janisch, Eustachio Faggiano (Abb Technology Ag)

10/28/10 - 20100270585 - Method for manufacturing a reverse-conducting insulated gate bipolar transistor
A reverse-conducting insulated gate bipolar transistor includes a wafer of first conductivity type with a second layer of a second conductivity type and a third layer of the first conductivity type. A fifth electrically insulating layer partially covers these layers. An electrically conductive fourth layer is electrically insulated from the...
Inventors: Munaf Rahimo, Jan Vobecky, Arnost Kopta (Abb Technology Ag)

09/30/10 - 20100248462 - Method for manufacturing a power semiconductor device
An exemplary method is disclosed for manufacturing a power semiconductor device which has a first electrical contact on a first main side and a second electrical contact on a second main side opposite the first main side and at least a two-layer structure with layers of different conductivity types, and...
Inventors: Jan Vobecky, Munaf Rahimo (Abb Technology Ag)

09/30/10 - 20100244093 - Semiconductor module
A controlled-punch-through semiconductor device with a four-layer structure is disclosed which includes layers of different conductivity types, a collector on a collector side, and an emitter on an emitter side which lies opposite the collector side. The semiconductor device can be produced by a method performed in the following order:...
Inventors: Munaf Rahimo, Jan Vobecky, Wolfgang Janisch, Arnost Kopta, Frank Ritchie (Abb Technology Ag)

06/17/10 - 20100151650 - Method for manufacturing a power semiconductor device
A method of manufacturing a power semiconductor device is provided. A first oxide layer is produced on a first main side of a substrate of a first conductivity type. A structured gate electrode layer with at least one opening is then formed on the first main side on top of...
Inventors: Arnost Kopta, Munaf Rahimo (Abb Technology Ag)

Abb Technology Ag, Abb Research Ltd

Archived*
(*May have duplicates - we are upgrading our archive.)

20120199954 - Semiconductor device


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The bibliographic references displayed about Munaf Rahimo's patents are for a recent sample of Munaf Rahimo's publicly published patent applications. The inventor/author may have additional bibliographic citations listed at the USPTO.gov. FreshPatents.com is not associated or affiliated in any way with the author/inventor or the United States Patent/Trademark Office but is providing this non-comprehensive sample listing for educational and research purposes using public bibliographic data published and disseminated from the United States Patent/Trademark Office public datafeed. This information is also available for free on the USPTO.gov website. If Munaf Rahimo filed recent patent applications under another name, spelling or location then those applications could be listed on an alternate page. If no bibliographic references are listed here, it is possible there are no recent filings or there is a technical issue with the listing--in that case, we recommend doing a search on the USPTO.gov website.

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